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US 2017/0365667 A1Published application
Epitaxial substrate
AssigneeAdvantest Corporation
InventorTaku SATO
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Abstract
A GaN epitaxial substrate comprises a growth substrate and a multilayer structure grown on the growth substrate in the Ga-polar direction. The multilayer structure comprises: a buffer layer, an n-type conductive layer formed on the buffer layer, a first GaN layer formed on the n-type conductive layer, an electron supply layer formed on the first GaN layer, and a second GaN layer formed on the electron supply layer.
Claims5
An epitaxial substrate comprising:
- a growth substrate;
- a buffer layer formed on the growth substrate;
- an n-type conductive layer formed on the buffer layer;
- a first GaN layer formed on the n-type conductive layer;
- an electron supply layer formed on the aforementioned first GaN layer;
- and
- a second GaN layer formed on the electron supply layer,
- wherein the aforementioned layers are grown in a Ga-polar direction.
5 more elements
Dependencies are inferred from the claim text.