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US 2017/0365664 A1Published application
Semiconductor device, inverter circuit, driving device, vehicle, and elevator
AssigneeKabushiki Kaisha Toshiba
InventorsRyosuke IIJIMA, Tatsuo SHIMIZU, Chiharu OTA
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Abstract
A semiconductor device according to an embodiment, includes: a silicon carbide layer; a gate electrode; and a gate insulating layer, the gate electrode including a p-type silicon carbide region containing aluminum, the gate insulating layer having a first region and a second region, the first region including a silicon oxide or a silicon oxynitride, the second region being positioned between the first region and the gate electrode, the second region including an oxide containing aluminum.
Claims14
A semiconductor device comprising:
- a silicon carbide layer;
- a gate electrode including a p-type silicon carbide region containing aluminum;
- and
- a gate insulating layer positioned between the silicon carbide layer and the gate electrode, the gate insulating layer having a first region and a second region, the first region including a silicon oxide or a silicon oxynitride, the second region being positioned between the first region and the gate electrode, the second region including an oxide containing aluminum.
1 more element
Dependencies are inferred from the claim text.