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US 2017/0365635 A1Published application
Image sensor including phase difference detectors
AssigneeSK hynix Inc.
InventorYun-Hui YANG
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Abstract
An image sensor may include a main photodiode formed in a substrate, a first inter-layer dielectric layer formed over a lower surface of the substrate, and phase difference detectors formed over the first inter-layer dielectric layer. The phase difference detectors include a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode, and a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.
Claims20
An image sensor, comprising:
- a main photodiode formed in a substrate;
- a first inter-layer dielectric layer formed over a lower surface of the substrate;
- and
- phase difference detectors formed over the first inter-layer dielectric layer,
- wherein the phase difference detectors include:
- a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode;
- and
- a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.
5 more elements
An image sensor, comprising:
- a left main photodiode and a right main photodiode that are formed in a substrate;
- a first inter-layer dielectric layer formed over a lower surface of the substrate;
- and
- phase difference detectors disposed over the first inter-layer dielectric layer,
- wherein the phase difference detectors include:
- a left phase difference detector that is vertically overlapping and aligned with the left main photodiode;
- and
- a right phase difference detector that is vertically overlapping and aligned with the right main photodiode.
5 more elements
An image sensor, comprising:
- a main photodiode formed in a substrate;
- a color filter formed over an upper surface of the substrate;
- a first inter-layer dielectric layer formed over a lower surface of the substrate;
- and
- a buried photodiode formed over the first inter-layer dielectric layer,
- wherein the buried photodiode is vertically overlapping the main photodiode and aligned with a first sidewall of the main photodiode.
3 more elements
Dependencies are inferred from the claim text.