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US 2017/0365630 A1Published application
Image sensor having nano voids and method for fabricating the same
AssigneeSK hynix Inc.
InventorYun-Hui YANG
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Abstract
An image sensor includes a plurality of photodiodes formed in a substrate; nano void regions formed in the substrate adjacent to sides of each photodiode of the plurality of photodiodes; and a plurality of nano voids formed in each nano void region of the nano void regions.
Claims22
An image sensor, comprising:
- a plurality of photodiodes formed in a substrate;
- nano void regions formed in the substrate adjacent to sides of each photodiode of the plurality of photodiodes;
- and
- a plurality of nano voids formed in each nano void region of the nano void regions.
1 more element
An image sensor, comprising:
- a plurality of photodiodes formed in a substrate;
- nano void regions formed in the substrate adjacent to sides of each photodiode of the plurality of photodiodes;
- a plurality of nano voids formed in each nano void region of the nano void regions;
- a color filter layer disposed over the plurality of photodiodes;
- and
- a micro lens layer disposed over the color filter layer.
3 more elements
A method for fabricating an image sensor, the method comprising:
- forming nano void regions and photodiodes in a substrate;
- and
- forming a layer having conductive lines over the substrate,
- wherein the nano void regions in the substrate having a plurality of pixel regions,
- wherein the photodiodes in the plurality of the pixel regions in the substrate, and
- wherein the nano void regions are formed adjacent to sides of the photodiodes.
3 more elements
Dependencies are inferred from the claim text.