Semiconductor device and semiconductor device manufacturing method
AssigneeLapis Semiconductor Co., Ltd.
InventorsHIROKAZU FUJIMAKI, KOICHI KANEKO
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Abstract
The present disclosure provides a semiconductor device that may reduce the size of the semiconductor device and a manufacturing method thereof. A silicon layer is provided in a first region of on a sapphire substrate, and a silicon device is formed on the silicon layer. An oxide semiconductor layer is provided in a second region on the sapphire substrate, and an oxide semiconductor device is formed in the oxide semiconductor layer. The silicon device is connected to the oxide semiconductor device by plural wiring lines formed in a wiring line layer.
Claims17
A semiconductor device comprising:
- a substrate;
- a silicon layer provided at a first region of a surface of the substrate;
- and
- an oxide semiconductor layer provided at a second region of the surface of the substrate, the second region being adjacent to the first region.
A manufacturing method of a semiconductor device, comprising:
- forming a silicon device in a first region of a silicon layer provided on a surface of a substrate;
- partially exposing the surface of the substrate by removing a second region of the silicon layer, the second region being adjacent to the first region;
- forming an oxide semiconductor layer on the exposed portion of the substrate;
- and
- forming an oxide semiconductor device on the oxide semiconductor layer.
Dependencies are inferred from the claim text.