Back to results
US 2017/0365599 A1Published application
High-voltage semiconductor devices
AssigneeVanguard International Semiconductor Corporation
InventorsShin-Cheng LIN, Hsiao-Ling CHIANG
Life of this patent
Estimating the term…
Abstract
A high-voltage semiconductor device includes a MOS device and a resistor device. The MOS device has a source, a drain, a drain insulation region adjacent to the drain, and a gate adjacent to the source. The resistor device is formed on the drain insulation region and is electrically connected to the drain. The resistor device has a plurality of resistor sections connected in series, and each of the plurality of resistor sections has a curved shape.
Claims8
A high-voltage semiconductor device, comprising:
- a metal oxide semiconductor (MOS) device, comprising:
- a source and a drain;
- a drain insulation region adjacent to the drain;
- a gate adjacent to the source;
- and
- a resistor device, fornied on the drain insulation region and electrically connected to the drain;
- wherein the resistor device has a plurality of resistor sections which are connected in series, and each of the resistor sections is curved, and
- wherein the resistor sections are connected in a zigzag form.
5 more elements
(canceled)
A high-voltage semiconductor device, comprising:
- a finger-type drain region having a plurality of drain finger portions;
- a source region surrounding the finger-type drain region, the source region having a plurality of source pocket portions corresponding to the drain finger portions;
- an insulation region formed between the finger-type drain region and the source region, and adjacent to the finger type drain region;
- a gate region formed between the insulation region and the source region;
- and
- a resistor device formed on the insulation region and electrically connected to one of the drain finger portions of the finger-type drain region;
- wherein the resistor device has a plurality of resistor sections which are connected in series, and each of the resistor sections is curved.
4 more elements
Dependencies are inferred from the claim text.