Semiconductor integrated circuit device

A semiconductor integrated circuit device, comprising:

• a semiconductor substrate;
• a plurality of high-potential-side regions, each high-potential-side region including
• a first semiconductor region of a first conductivity type, selectively provided in a surface layer of the semiconductor substrate,
• a second semiconductor region of a second conductivity type, selectively provided in the first semiconductor region,
• a first electrode connected to a maximum potential of a power source voltage and contacting the first semiconductor region, and
• a second electrode contacting the second semiconductor region;
• and
• a low-potential-side region provided in an area other than the plurality of high-potential-side regions, the low-potential-side region including
• a third semiconductor region of the second conductivity type, provided in an area of the surface layer of the semiconductor substrate other than the first semiconductor region,
• an interphase region between adjacent high-potential-side regions, including the third semiconductor region, and
• a third electrode provided in an area other than the interphase region, the third electrode being connected to the minimum potential of the power source voltage and contacting the third semiconductor region.