US 2017/0365595 A1 · Schottky Integrated High Voltage Terminations and Related HVIC Applications

Abstract

A Schottky diode includes a cathode terminal in a high voltage region of a semiconductor die, an anode terminal in a low voltage region of the semiconductor die, where the anode terminal and the cathode terminal are separated by a junction isolation termination situated between the high voltage region and the low voltage region. The Schottky diode includes a junction barrier Schottky diode or a trench metal-oxide-semiconductor (MOS) Schottky diode. The junction isolation termination includes pzener rings. The semiconductor die includes a substrate of a first conductivity type, an epitaxial layer of a second conductivity type situated on the substrate, a well region of the second conductivity type situated in the epitaxial layer in the high voltage region, and coupled to the cathode terminal, a Schottky barrier situated on the epitaxial layer in the low voltage region, and coupled to the anode terminal.

Claims22

Dependent claims

A Schottky diode comprising:

a cathode terminal in a high voltage region of a semiconductor die, said high voltage region comprising an N-type implant region formed in an N-type epitaxial layer, said N-type implant region being electrically coupled to said cathode terminal;
an anode terminal in a low voltage region of said semiconductor die, said low voltage region comprising a first P-type reduced surface field (RESURF) region formed in said N-type epitaxial layer and a P-type isolation region extending into a P-type substrate disposed below said N-type epitaxial layer;
and
a junction isolation termination situated between said high voltage region and said low voltage region, said junction isolation termination comprising a second P-type RESURF region formed in said N-type epitaxial layer and structurally isolating said low voltage region from said high voltage region, said junction isolation termination configured to withstand a reverse bias voltage of at least 600 volts when said Schottky diode is under reverse bias.

1 more element

Dependencies are inferred from the claim text.

Schottky Integrated High Voltage Terminations and Related HVIC Applications

Life of this patent

Schottky Integrated High Voltage Terminations and Related HVIC Applications

Life of this patent

Abstract

Claims22