Semiconductor device having stacked semiconductor chips and method for fabricating the same

A method for manufacturing a semiconductor device, the method comprising:

• forming, on a package substrate, a plurality of stack structures horizontally spaced apart from each other, each of the stack structures including a plurality of semiconductor chips vertically stacked;
• forming adhesive structures respectively filling spaces between adjacent stack structures of the plurality of stack structures;
• and
• removing at least a portion of the adhesive structure between the adjacent stack structures,
• wherein forming the stack structures and the adhesive structures comprises sequentially stacking and compressing the plurality of semiconductor chips each including an adhesive film disposed on a surface of the semiconductor chip facing the package substrate.

A method for manufacturing a semiconductor device, comprising:

• stacking a plurality of first semiconductor chips on a package substrate, wherein the first semiconductor chips are spaced apart from each other on the package substrate, and wherein each of the first semiconductor chips comprises a first adhesive film;
• stacking a second semiconductor chip of a plurality of second semiconductor chips on each of a corresponding one of the first semiconductor chips, wherein each of the second semiconductor chips comprises a second adhesive film;
• stacking a third semiconductor chip of a plurality of third semiconductor chips on each of a corresponding one of the second semiconductor chips, wherein each of the third semiconductor chips comprises a third adhesive film,
• wherein stacking the first, second and third semiconductor chips forms a plurality of stacked structures spaced apart from each other on the package substrate, each of the stacked structures including an adhesive structure comprising the first, second and third adhesive films, and wherein the adhesive structure comprises a plurality of extensions disposed on sidewalls of respective ones of the first, second and third semiconductor chips;
• forming a first molding layer on upper surfaces of the plurality of third semiconductor chips and on the plurality of extensions in spaces between adjacent stacked structures of the plurality of stacked structures;
• removing the first molding layer between adjacent third semiconductor chips of the plurality of semiconductor chips;
• forming a second molding layer in each of spaces formed by removing the first molding layer between adjacent third semiconductor chips of the plurality of semiconductor chips;
• and
• separating each of the stacked structures from each other by cutting through the first and second molding layers and through the package substrate between adjacent stacked structures of the plurality of stacked structures.