Semiconductor device assembly with heat transfer structure formed from semiconductor material

A method of forming semiconductor device assemblies, comprising:

• positioning a stack of first semiconductor dies in a first cavity of a semiconductor wafer formed from a semiconductor material;
• positioning a stack of second semiconductor dies in a second cavity of the semiconductor wafer;
• attaching a portion of a third semiconductor die to the semiconductor wafer such that the third semiconductor die covers an opening of the first cavity;
• attaching a portion of a fourth semiconductor die to the semiconductor wafer such that the fourth semiconductor die covers an opening of the second cavity;
• and
• singulating the semiconductor wafer along a dicing lane between the first and second cavities.

A semiconductor device assembly, comprising:

• a semiconductor wafer formed from a semiconductor material, wherein the semiconductor wafer includes an inner region, an outer region projecting from the inner region, and a plurality of cavities defined in the outer region by the inner and outer regions;
• memory dies stacked in the cavities;
• logic dies including a base region and a peripheral region adjacent to the base region, wherein the base region of each logic die is attached to the semiconductor wafer, and wherein the logic dies enclose respective ones of the memory dies within the cavities;
• and
• wherein the semiconductor wafer further includes a plurality of dicing lanes between the logic dies.