Semiconductor package and related methods
AssigneeFairchild Semiconductor Corporation
InventorsSeungwon IM, Oseob JEON, JoonSeo SON, Mankyo JONG, Olaf ZSCHIESCHANG
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Abstract
Implementations of semiconductor packages may include: a first substrate having a first dielectric layer coupled between a first metal layer and a second metal layer; a second substrate having a second dielectric layer coupled between a third metal layer and a fourth metal layer. A first die may be coupled with a first electrical spacer coupled in a space between and coupled with the first substrate and the second substrate and a second die may be coupled with a second electrical spacer coupled in a space between and coupled with the first substrate and the second substrate.
Claims20
A semiconductor package comprising:
- a first substrate comprising a first dielectric layer coupled between a first metal layer and a second metal layer;
- a second substrate comprising a second dielectric layer coupled between a third metal layer and a fourth metal layer;
- a first die coupled with a first electrical spacer coupled in a space between and coupled with the first substrate and the second substrate;
- and
- a second die coupled with a second electrical spacer coupled in a space between and coupled with the first substrate and the second substrate.
A power module comprising:
- a first substrate comprising a first dielectric layer coupled between a first metal layer and a second metal layer, the first dielectric layer comprising an extension portion extending beyond a length of the first metal layer and a length of the second metal layer and where the length of the first metal layer and the length of the second metal layer are the same;
- a second substrate comprising a second dielectric layer coupled between a third metal layer and a fourth metal layer, the second dielectric layer comprising an extension portion extending beyond a length of the third metal layer and a length of the fourth metal layer and where the length of the third metal layer and the length of the fourth metal layer are the same;
- a first die coupled with a first electrical spacer coupled in a space between and coupled to the first substrate and the second substrate, a first side of the first die coupled with one of the second metal layer and the third metal layer, a second side of the die coupled with a first side of the first electrical spacer, a second side of the first electrical spacer coupled with one of the second metal layer and the third metal layer;
- and
- a second die coupled with a second electrical spacer coupled in a space between and coupled to the first substrate and the second substrate, a first side of the second die coupled with one of the second metal layer and the third metal layer, the second side of the die coupled with a first side of the first electrical spacer, a second side of the first electrical spacer coupled with one of the second metal layer and the third metal layer.
A power module comprising:
- a first substrate comprising a first dielectric layer coupled between a first metal layer and a second metal layer;
- a second substrate comprising a second dielectric layer coupled between a third metal layer and a fourth metal layer;
- a first die coupled with a first electrical spacer coupled in a space between the first substrate and the second substrate;
- a second die coupled with a second electrical spacer coupled in a space between the first substrate and the second substrate;
- one or more flexible electrical supports coupled between the first substrate and the second substrate.
Dependencies are inferred from the claim text.