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US 2017/0365577 A1Published application
Semiconductor device with a wire bonding and a sintered region, and manufacturing process thereof
AssigneeSTMicroelectronics S.r.l.
InventorsAgatino Minotti, Gaetano Montalto
Life of this patent
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Abstract
An electronic device includes: a semiconductor body; a front metallization region; a top buffer region, arranged between the front metallization region and the semiconductor body; and a conductive wire, electrically connected to the front metallization region. The top buffer region is at least partially sintered.
Claims20
An electronic device comprising:
- a semiconductor body;
- a top conductive region in contact with the semiconductor body;
- a top buffer region positioned on the top conductive region, and on the semiconductor body, wherein the top buffer is at least partially sintered;
- a front metallization region positioned on the top buffer region, the top buffer region being arranged between the front metallization region and the semiconductor body;
- and
- a conductive wire electrically connected to the front metallization region, wherein said second top buffer region includes:
- a first layer on the second top conductive region;
- a second layer, made of a sintering paste, on the first layer;
- a third layer contacting the second layer, wherein the first and third layers are made of a same material and the sintering paste including particles of said same material.
6 more elements
A process for manufacturing an electronic device, comprising:
- forming a semiconductor body;
- forming a front metallization region;
- forming a top buffer region between the front metallization region and the semiconductor body;
- forming a top conductive region in contact with the semiconductor body, wherein:
- forming the top buffer region and front metallization region comprises:
- forming a first layer on the semiconductor body;
- forming a second layer on the first layer;
- providing on the second layer a conductive structure including a main body and a cantilever portion, said cantilever portion being coated at least partially by a third layer, said providing the conductive structure being carried out in such a way that the third layer contacts the second layer;
- and
- carrying out a sintering operation;
- forming the top buffer region comprises forming the first layer on the top conductive region.
8 more elements
An electronic device comprising:
- a semiconductor body;
- a first metallization region;
- a first buffer region arranged between the first metallization region and the semiconductor body, wherein said first buffer region comprises:
- a first layer in contact with the semiconductor body;
- a second layer in contact with the first layer, said second layer being a sintered layer;
- a third layer contacting the second layer, wherein the first and third layers are made of a same material, and the second layer includes particles of the same material.
3 more elements
Dependencies are inferred from the claim text.