Semiconductor device and method of forming the same
AssigneeSumitomo Electric Device Innovations, Inc.
InventorKeita MATSUDA
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Abstract
A semiconductor device having an electrode type of the ball grid array (BGA) and a process of forming the electrode are disclosed. The electrode insulating film, a seed layer on the insulating film, a mound metal on the insulating film and an interconnection on the seed layer. The mound metal surrounds the seed layer without forming any gap therebetween. The interconnection, which is formed by electroless plating, is apart from the insulating film with the mound metal as an extension barrier for the plating.
Claims18
A semiconductor device having an electrode type of ball grid array (BGA), wherein the electrode comprises:
- an insulating film;
- a seed layer provided on the insulating film;
- a mound metal provided on the insulating film and surrounding the seed layer, the mound metal forming no gap against the seed layer;
- and
- an interconnection provided on the seed layer,
- wherein the interconnection is apart from the insulating film as interposing the seed layer and the mound metal therebetween.
A process of forming a semiconductor device, comprising steps of:
- forming an insulating film
- forming a seed layer on the insulating film;
- forming a mound metal so as to surround the seed layer on the insulating film, the mound metal having an outer edge and an inner edge, the mound metal forming no gap against the seed layer;
- forming an interconnection on the seed layer by electroless plating, the interconnection being apart from the insulating film as interposing the seed layer and the mound metal therebetween.
Dependencies are inferred from the claim text.