Semiconductor Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Ming-Che Ho, Hung-Jui Kuo, Yi-Wen Wu, Tzung-Hui Lee
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Abstract
A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.
Claims21
-6. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- depositing a dielectric layer over a redistribution layer, the dielectric layer comprising a first dielectric material;
- forming at least one opening through the dielectric layer, wherein the forming the at least one opening leaves a support structure of the first dielectric material between separate portions of the at least one opening;
- and
- depositing a conductive material into the at least one opening and also at least partially over the dielectric layer, wherein the depositing the conductive material deposits the conductive material over the dielectric layer to a thickness of no greater than about 3 μm.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a seed layer over a dielectric layer, wherein a first portion of the seed layer is in physical contact with a redistribution layer at a first point, a second portion of the seed layer is in physical contact with the redistribution layer at a second point electrically connected with the first point, and a third portion of the dielectric layer is located between the first point and the second point;
- applying and patterning a photoresist over the seed layer;
- and
- plating a conductive material onto the seed layer within the photoresist, wherein at an end of the plating the conductive material the conductive material and the seed layer have a combined thickness over the dielectric layer of less than about 3 μm.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first redistribution layer over a substrate;
- forming a protective layer over the first redistribution layer, the protective layer comprising a first material;
- forming a first conductive material extending through a first opening in the protective layer to make electrical connection with the first redistribution layer, the first conductive material having a first thickness over the protective layer of less than about 3 μm;
- and
- forming a support structure located between the first conductive material and the first redistribution layer, wherein the support structure comprises the first material and is centered to the first conductive material is a top down view.
Dependencies are inferred from the claim text.