Semiconductor Devices and Methods of Manufacturing the Same

A semiconductor device comprising:

• a substrate including an active fin, the active fin including a plurality of protruding portions and a plurality of recesses between neighboring ones of the protruding portions;
• a gate structure extending in a second direction crossing the first direction, the gate structure on one of the protruding portions of the active fin;
• an epitaxial structure comprising silicon within a recess of the plurality of recesses;
• an insulating interlayer on the epitaxial structure, the insulating interlayer including a contact hole exposing a surface of the epitaxial structure;
• a metal silicide pattern within a lower portion of the contact hole, the metal silicide pattern directly contacting the exposed surface of the structure;
• a first barrier pattern directly contacting an upper surface of the metal silicide pattern and a sidewall of the contact hole, the first barrier pattern including a metal nitride;
• a second barrier pattern on the first barrier pattern, the second barrier pattern including a metal nitride;
• and
• a metal pattern on the second barrier pattern, the metal pattern in the contact hole.

A semiconductor device comprising:

• a substrate;
• an insulating interlayer on the substrate;
• an epitaxial structure between the substrate and the insulating interlayer;
• a contact hole in the insulating interlayer having a bottom portion of the contact hole above the epitaxial structure;
• a metal silicide pattern in the bottom portion of the contact hole and above the epitaxial structure;
• and
• a barrier pattern structure directly on the metal silicide pattern, the barrier pattern structure comprising:
• a first barrier pattern directly contacting the metal silicide pattern;
• and
• a second barrier pattern on the first barrier pattern,
• wherein the first barrier pattern comprises a metal nitride or a metal oxynitride.