Semiconductor device

A semiconductor device comprising:

• a substrate having a main surface;
• at least one first wiring layer arranged on said main surface of said substrate;
• a first insulating film arranged so as to cover an upper face of said at least one first wiring layer;
• a second insulating film arranged so as to cover an upper face of said first insulating film;
• a plurality of second wiring layers arranged on said second insulating film;
• a metal resistive element layer arranged on the upper face of said first insulating film so as to be positioned below at least one second wiring layer among said plurality of second wiring layers;
• and
• a plurality of conductive layers extending respectively from said plurality of second wiring layers toward said metal resistive element layer in a direction perpendicular to said main surface, wherein
• at least one conductive layer among said plurality of conductive layers extends from said second wiring layer to said metal resistive element layer in the direction perpendicular to said main surface.

A semiconductor device comprising:

• a substrate having a main surface;
• a plurality of first wiring layers arranged on said main surface of said substrate;
• a first insulating film arranged so as to cover upper faces of said plurality of first wiring layers;
• at least one metal resistive element layer arranged on said first insulating film;
• at least one second wiring layer including the same layer as said at least one metal resistive element layer;
• and
• a plurality of conductive layers extending from at least one of said metal resistive element layer and said second wiring layer to said plurality of first wiring layers, respectively, in a direction perpendicular to said main surface, in each of a metal resistive element region having said at least one metal resistive element layer and a wiring region having said at least one second wiring layer.