Semiconductor device and a method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hsin HU, Yu-Chiun LIN, Yi-Hsuan CHUNG, Chung-Peng HSIEH, Chung-Chieh YANG, Po-Nien CHEN
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.
Claims20
A semiconductor device, comprising:
- a dummy gate structure disposed over a substrate;
- a first interlayer dielectric layer in which the dummy gate structure is embedded;
- a second interlayer dielectric layer disposed over the first interlayer dielectric layer;
- and
- a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer such that the resistor wire is separated from the dummy gate structure by the second interlayer dielectric layer,
- wherein the resistor wire overlaps the dummy gate structure in plan view.
A semiconductor device, comprising:
- a first group of dummy gate structures disposed over a substrate;
- a first interlayer dielectric layer in which the first group of dummy gate structures are embedded;
- a second interlayer dielectric layer disposed over the first interlayer dielectric layer;
- a third interlayer dielectric layer disposed over the second interlayer dielectric layer;
- and
- a resistor wire formed by a conductive material and embedded in the third interlayer dielectric layer, wherein:
- the resistor wire is separated from the first group of dummy gate structures by the second and third interlayer dielectric layers, and
- the resistor wire partially or fully overlaps the first group of dummy gate structures in plan view.
A semiconductor device, comprising:
- a first group of dummy gate structures and a second group of dummy gate structures disposed over a substrate, each of the dummy gate structures extending in a first direction;
- a first interlayer dielectric layer in which the first and second group of dummy gate structures are embedded;
- a second interlayer dielectric layer disposed over the first interlayer dielectric layer;
- a first resistor wire formed of a conductive material, extending in the first direction and embedded in the second interlayer dielectric layer;
- and
- a second resistor wire formed of the conductive material, extending in the first direction and embedded in the second interlayer dielectric layer, wherein:
- the first resistor wire at least partially overlaps the first group of dummy gate structure in plan view and is separated from the first group of dummy gate structure by the second interlayer dielectric layer, and
- the second resistor wire at least partially overlaps the second group of dummy gate structure in plan view and is separated from the second group of dummy gate structure by the second interlayer dielectric layer.
Dependencies are inferred from the claim text.