Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistor
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Alain Loiseau
Life of this patent
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Abstract
An electrical device that in some embodiments includes a substrate including a lateral device region and a vertical device region. A lateral diffusion metal oxide semiconductor (LDMOS) device may be present in the lateral device region, wherein a drift region of the LDMOS device has a length that is parallel to an upper surface of the substrate in which the LDMOS device is formed. A vertical field effect transistor (VFET) device may be present in the vertical device region, wherein a vertical channel of the VFET has a length that is perpendicular to said upper surface of the substrate, the VFET including a gate structure that is positioned around the vertical channel.
Claims20
A method of forming an electrical device comprising:
- forming a dielectric layer in a lateral device region of the substrate and a vertical device region of a substrate, wherein a first portion of the dielectric layer provides a drift region gate dielectric for an LDMOS device being formed in the lateral device region, and a second portion of the dielectric layer provides a spacer for a VFET being formed in the vertical device region;
- and
- forming an epitaxial semiconductor material on the at least one first fin structure in the lateral device region of the substrate and the at least one second fin structure in the vertical device region.
A method of forming an electrical device comprising:
- forming a dielectric layer in the lateral device region of the substrate and the vertical device region of the substrate, wherein a first portion of the dielectric layer provides a drift region gate dielectric for an LDMOS device being formed in the lateral device region, and a second portion of the dielectric layer provides a spacer for the VFET being formed in the vertical device region.
Dependencies are inferred from the claim text.