Semiconductor device and method of manufacturing the semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsHidenobu Fukutome, Hiroyuki Ohta, Mitsugu Tajima
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Abstract
A semiconductor device includes a transistor configuration including first and second gate electrodes, each of the first and second gate electrodes having at least a bottom layer and an upper layer including polycrystalline silicon grains, wherein the first gate electrode is a nMOS gate electrode formed in an nMOS region of the transistor configuration, wherein the polycrystalline silicon grains included in the bottom layer of the first gate electrode have a greater particle diameter than the polycrystalline grains included in the upper layer of the second gate electrode.
Claims9
A method of manufacturing a semiconductor device comprising:
- forming a first amorphous silicon film on a semiconductor substrate;
- implanting an impurity including at least one of P, Ge, and Si to the first amorphous silicon film in a nMOS region of the semiconductor substrate;
- forming a second amorphous silicon film on top of the first amorphous silicon film;
- forming a gate electrode pattern in each of the first and second amorphous silicon films;
- and
- polycrystalizing the first amorphous silicon film in the nMOS region by performing a thermal process after the forming of the gate electrode pattern.
Dependencies are inferred from the claim text.