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US 2017/0365520 A1Published application
Method for Producing an Integrated Heterojunction Semiconductor Device
AssigneeInfineon Technologies Austria AG
InventorsGerhard Prechtl, Gebhart Dippold
Life of this patent
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Abstract
A method of producing a semiconductor component is provided. The method includes providing a silicon substrate having a <111>-surface defining a vertical direction, forming in the silicon substrate at least one electronic component, forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the <111>-surface, and forming a HEMT-structure above the <111>-surface.
Claims16
A method of producing a semiconductor device, comprising:
- providing a silicon substrate having a <111>-surface defining a vertical direction;
- forming in the silicon substrate at least one electronic component;
- forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the <111>-surface;
- and
- forming a HEMT-structure above the <111>-surface.
2 more elements
A method of producing a semiconductor device, comprising:
- providing a <111>-silicon wafer with a first surface defining a vertical direction;
- forming in the <111>-silicon wafer at least one of a resistor and a bipolar semiconductor structure;
- forming at least two wide band-gap semiconductor layers on the <111>-silicon wafer by epitaxial deposition;
- and
- forming a HEMT-structure in the at least two wide band-gap semiconductor layers.
2 more elements
A method of producing a semiconductor device, comprising:
- providing a <111>-silicon wafer with a first surface defining a vertical direction;
- forming at least two wide band-gap semiconductor layers on the <111>-silicon wafer by epitaxial deposition to form a heterojunction above the first surface;
- forming a HEMT-structure above the first surface;
- partly removing the at least two wide band-gap semiconductor layers to expose a portion of the first surface;
- and
- forming at least one electronic component below the heterojunction.
3 more elements
16-25. (canceled)
Dependencies are inferred from the claim text.