Method of processing a wafer and wafer processing system

A method of processing a wafer, having on one side a device area with a plurality of devices partitioned by a plurality of division lines, wherein the method comprises:

• attaching the one side of the wafer or a side of the wafer opposite to the one side to an adhesive tape supported by a first annular frame, so that the wafer is arranged within a central opening of the first annular frame;
• applying a laser beam to the wafer along the division lines, so as to form a modified region in the wafer along the division lines;
• placing the wafer attached to the adhesive tape on a support surface of a support member before or after applying the laser beam to the wafer, so that the side of the adhesive tape opposite to the side thereof which is attached to the wafer is in contact with the support surface, wherein an outer diameter of the support member in the plane of the support surface is smaller than an inner diameter of the first annular frame;
• after applying the laser beam to the wafer, moving the first annular frame and at least a peripheral part of the support member relative to each other in the direction perpendicular to the plane of the support surface, so as to radially expand the adhesive tape in the directions lying in the plane of the support surface, thereby dividing the wafer along the division lines into a plurality of dies;
• and
• attaching a second annular frame to a portion of the expanded adhesive tape arranged at the peripheral part of the support member, wherein the second annular frame is attached to the side of the adhesive tape which is attached to the wafer and the wafer, which has been separated into the plurality of dies, is arranged within a central opening of the second annular frame;
• wherein
• an inner diameter of the second annular frame is smaller than the outer diameter of the support member in the plane of the support surface and smaller than the inner diameter of the first annular frame.