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US 2017/0365485 A1Published application
Ion beam etching
AssigneeVeeco Instruments Inc.
InventorsTimothy Pratt, Katrina Rook
Life of this patent
Estimating the term…
Abstract
Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.
Claims16
A method comprising:
- providing a substrate having at least two masking elements thereon;
- ion beam etching the substrate from a first direction without rotation at a first incidence angle to provide a once-etched substrate;
- ion beam etching the once-etched substrate from a second direction without rotation with an angle of projection about 180 degrees from the first direction at the first incidence angle to provide a twice-etched substrate;
- ion beam etching the twice-etched substrate without rotation at a second incidence angle to provide a thrice-etched substrate;
- and
- ion beam etching the thrice-etched substrate without rotation with an angle of projection about 180 degrees from the direction of ion beam etching the twice-etched substrate, etching the thrice-etched substrate at the second incidence angle.
3 more elements
A method comprising:
- providing a substrate having a first masking element and a second masking element thereon;
- forming a first etched region by unidirectional ion beam etching from a first direction using the first masking element as a shading structure;
- forming a second etched region and a third etched region by unidirectional ion beam etching from a second direction with an angle of projection about 180 degrees from the first direction using the second masking element as a shading structure;
- forming a fourth etched region by unidirectional ion beam etching using the first masking element and the first etched region as shading structures;
- forming a fifth etched region by unidirectional ion beam etching the masking layer from the second direction with an angle of projection about 180 degrees from the direction used for forming the fourth etched region, using the second masking element and the second etched region as shading structures.
2 more elements
A method comprising:
- providing a substrate having a first masking element and a second masking element thereon;
- unidirectionally etching the substrate from a first direction at a first incidence angle;
- unidirectionally etching the substrate from a second direction with an angle of projection about 180 degrees from the first direction at the first incidence angle;
- unidirectionally etching the substrate at a second incidence angle to form a third masking element on the substrate between the first masking element and the second masking element;
- and then
- unidirectionally etching the substrate with an angle of projection about 180 degrees from the direction of the previous etching at the second incidence angle to form a fourth masking element on the substrate between the first masking element and the second masking element.
3 more elements
Dependencies are inferred from the claim text.