Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions
AssigneeThe Regent of the University of Colorado, A Body Corporate
InventorsSTEVEN M. GEORGE, YOUNGHEE LEE
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Abstract
The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. The invention provides a solid substrate obtained according to any of the methods of the invention. The invention further provides a porous substrate obtained according to any of the methods of the invention. The invention further provides a patterned solid substrate obtained according to any of the methods of the invention.
Claims30
A method of promoting atomic layer etching (ALE) on a solid substrate comprising a first metal compound, the method comprising the steps of:
- (a) contacting the solid substrate with a gaseous second metal precursor, wherein the precursor comprises at least one selected from the group consisting of monodentate ligands, chelates and any combinations thereof,
- whereby a first metal precursor is formed;
- (b) contacting the solid substrate formed in step (a) with a halogen-containing gas,
- whereby first metal halide is formed;
- and
- (c) optionally repeating steps (a) and (b) one or more times;
- wherein the monodentate ligand comprises at least one selected from the group consisting of alkyl, hydride, carbonyl, halide, alkoxide, alkylamide, silylamide and any combinations thereof;
- and,
- wherein the chelate comprises at least one selected from the group consisting of (3-diketonate, amidinate, acetamidinate, 0-diketiminate, diamino alkoxide, metallocene and any combinations thereof;
- whereby ALE of the solid substrate is promoted.
3-4. (canceled)
(canceled)
11-13. (canceled)
17-18. (canceled)
22-27. (canceled)
29-30. (canceled)
A method of modifying a porous substrate, wherein the porous substrate comprises a first metal compound, the method comprising the steps of:
- (a) contacting the porous substrate with a gaseous second metal precursor, wherein the precursor comprises at least one selected from the group consisting of monodentate ligands, chelates and any combinations thereof,
- whereby a first metal precursor is formed;
- (b) contacting the porous substrate formed in step (a) with a halogen-containing gas,
- whereby first metal halide is formed;
- and
- (c) optionally repeating steps (a) and (b) one or more times;
- wherein the modifying comprises at least one activity selected from the group consisting of:
- forming or enlarging pores in the porous substrate;
- patterning the solid substrate;
- selectively removing a portion of the solid substrate;
- smoothing the surface of the solid substrate;
- removing at least a fraction of an impurity from the solid substrate, wherein a portion of a surface of the solid substrate has an exposed first metal compound;
- and
- reducing the size of at least one 3D architecture feature on a surface of the solid substrate.
(canceled)
34-38. (canceled)
A method of promoting chemical vapor etching (CVE) on a solid substrate comprising a first metal compound, the method comprising contacting the solid substrate concurrently with a gaseous second metal precursor and a halogen-containing gas, wherein the gaseous compound of the second metal comprises at least one selected from the group consisting of monodentate ligands, chelates and any combinations thereof,
- wherein the monodentate ligand comprises at least one selected from the group consisting of alkyl, hydride, carbonyl, halide, alkoxide, alkylamide and silylamide;
- and,
- wherein the chelate comprises at least one selected from the group consisting of β-diketonate, amidinate, acetamidinate, β-diketiminate, diamino alkoxide, and metallocene;
- whereby etching of the solid substrate is promoted.
44-51. (canceled)
Dependencies are inferred from the claim text.