Cut last self-aligned litho-etch patterning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Wei Huang, Chia-Ying Lee, Ming-Chung Liang
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Abstract
The present disclosure relates to a method of performing a semiconductor fabrication process. The method may be performed by forming a spacer material having vertically extending segments along sidewalls of a masking layer and a horizontally extending segment connecting the vertically extending segments. A cut material is formed over a part of the horizontally extending segment, and the horizontally extending segment of the spacer material not covered by the cut material is removed. A layer under the masking layer is patterned according to the masking layer and the spacer material.
Claims20
A method of performing a semiconductor fabrication process, comprising:
- forming a spacer material having vertically extending segments along sidewalls of a masking layer and a horizontally extending segment connecting the vertically extending segments;
- forming a cut material over a part of the horizontally extending segment;
- removing the horizontally extending segment of the spacer material not covered by the cut material;
- and
- patterning a layer under the masking layer according to the masking layer and the spacer material.
A method of performing a semiconductor fabrication process, comprising:
- forming a spacer material extending between sidewalls of a masking layer;
- forming a cut material over a part of the spacer material;
- etching the spacer material with the cut material over the spacer material;
- and
- patterning a layer under the masking layer according to the masking layer and the spacer material.
A method of semiconductor processing, comprising:
- forming a masking structure having sidewalls defining a first plurality of openings separated from sidewalls defining a second plurality of openings along a first direction by a spacer material and a first masking layer, wherein the sidewalls defining the first plurality of openings are separated along a second direction by the spacer material and an overlying cut material;
- and
- patterning a layer under the masking structure according to the masking structure.
Dependencies are inferred from the claim text.