Semiconductor device structure and methods of its production

A semiconductor device structure comprising:

• a SiC substrate,
• an Inx1Aly1Ga1−x1−y1N buffer layer, wherein x1=0−1, y1=0−1 and x1+y1=1, preferably x1<0.05 and y1<0.50, more preferably x1<0.03 and y1<0.30 and most preferably x1<0.01 and y1<0.10, and
• an Inx2Aly2Ga1−x2−y2N nucleation layer, wherein x2=0−1, y2=0−1 and x2+y2=1, preferably x2<0.05 and y2>0.50, more preferably x2<0.03 and y2>0.70 and most preferably x2<0.01 and y2>0.90, sandwiched between the SiC substrate and the buffer layer,
• wherein
• the buffer layer has a thickness of 1 to 4 μm, preferably 1.3 to 3 μm and most preferably 1.5 to 2 μm,
• the nucleation layer has a thickness of 10−100 nm, preferably 10-50 nm and most preferably 10-40 nm,
• the buffer layer presents a rocking curve with a (102) peak having a FWHM below 250 arcsec, and
• the nucleation layer presents a rocking curve with a (105) peak having a FWHM below 200 arcsec, as determined by X-ray Diffraction (XRD).

A method of producing a semiconductor device structure, comprising:

• providing a SiC substrate, and
• providing an Inx2Aly2Ga1−x2−y2N nucleation layer, wherein x2=0−1, y2=0−1, preferably x2<0.05 and y2>0.50, more preferably x2<0.03 and y2>0.70 and most preferably x2<0.01 and y2>0.90, and x2+y2=1, on the SiC substrate,
• providing an Inx1Aly1Ga1−x1−y1N buffer layer, wherein x1=0−1, y1=0−1 and x1+y1=1, preferably x1<0.05 and y1<0.50, more preferably x1<0.03 and y1<0.30 and most preferably x1<0.01 and y1<0.10,
• wherein the pressure upon growth of the nucleation layer and of the buffer layer is 200 mbar to 10 mbar, preferably 100 mbar to 20 mbar, most preferably 60 mbar to 40 mbar,
• the starting temperature upon growth of the nucleation layer is 800° C. to 1150° C., preferably of 900° C.-1100° C., most preferably of 950° C.-1050° C., and
• the temperature upon growth of the nucleation layer is 800° C. to 1150° C., preferably of 900° C.-1100° C., most preferably of 950° C.-1050° C., and
• the nucleation layer and the buffer layer is grown by Metal Organic Chemical Vapor Deposition (MOCVD) or Metal Organic Vapor Phase Epitaxy (MOVPE),
• wherein
• the temperature upon growth of the nucleation layer is ramped up by 5-25° C./min, preferably by 7-20° C./min and most preferably by 10−15° C./min, for a time period of 2 min to 20 min,
• the buffer layer is provided to a thickness of 1 to 4μm, preferably 1.3 to 3μm and most preferably 1.5 to 2μm,
• the nucleation layer is provided to a thickness of 10−100 nm, preferably 10-50 nm and most preferably 10-40 nm.