Method for manufacturing semiconductor device and recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorNaofumi OHASHI
Life of this patent
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Abstract
To reduce a hydroxy group in a silicon oxide film formed at a low temperature and obtain a silicon oxide film with an excellent film quality, (a) accommodating a substrate on a surface of which a silicon oxide film formed at a processing temperature of 300° C. or lower is formed in a processing container, (b) plasma-exciting a hydrogen gas, and a step of supplying hydrogen active species generated in (b) to the substrate are performed.
Claims12
A method of manufacturing a semiconductor device comprising:
- (a) accommodating a substrate on a surface of which a silicon oxide film formed at a processing temperature of 300° C. or lower is formed in a processing container;
- (b) plasma-exciting a hydrogen gas;
- and
- (c) supplying hydrogen active species generated in (b) to the substrate.
A method of manufacturing a semiconductor device comprising:
- (a) forming a silicon oxide film on a substrate surface at a processing temperature of 300° C. or lower;
- (b) plasma-exciting a hydrogen gas;
- and
- (c) supplying hydrogen active species generated in (b) to the substrate.
A non-transitory computer-readable recording medium recording a program which allows a computer to execute:
- (a) accommodating a substrate on a surface of which a film including a silazane bond is formed in a first processing container;
- (b) supplying a hydrogen peroxide gas into the first processing container and modifying the film including the silazane bond to a silicon oxide film at a processing temperature of 200° C. or lower;
- (c) carrying out the substrate on the surface of which the silicon oxide film is formed from the first processing container;
- (d) accommodating the substrate on the surface of which the silicon oxide film is formed in a second processing container;
- (e) plasma-exciting a hydrogen gas;
- and
- (f) supplying hydrogen active species generated in (e) to the substrate on the surface of which the silicon oxide film is formed.
Dependencies are inferred from the claim text.