Plasma generator apparatus
AssigneeJehara Corporation
InventorHongseub Kim
Life of this patent
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Abstract
Provided is a plasma generator apparatus for forming a thin film in local plasma atmosphere at a predetermined spatial period. The plasma generator apparatus includes an electrode body part 141, a plurality of gas supply ports 142 which protrude from the electrode body part 141 at predetermined pitch intervals to direct the substrate and have nozzle holes h1 electing the reaction gas, and a plurality of purge ports 143 which are dented with steps between the gas supply ports 142 and have exhaust holes h2 exhausting the reaction gas.
Claims9
A plasma generator apparatus for forming a thin film in a local plasma atmosphere at a predetermined spatial period, the plasma generator apparatus comprising:
- a electrode body part;
- a plurality of gas supply ports which protrude from the electrode body part at predetermined pitch intervals to face the substrate and have nozzle holes electing reaction gas;
- and
- a plurality of purge ports which are dented with steps between the gas supply ports and have exhaust holes exhausting reaction byproducts.
An atomic layer deposition apparatus, comprising:
- a reaction chamber;
- a transfer unit for horizontally transferring a substrate in the reaction chamber;
- and
- a plasma generating unit for supplying reaction gas to the top of the substrate in a local plasma atmosphere at a predetermined spatial period on the substrate transferred by the transfer unit.
Dependencies are inferred from the claim text.