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US 2017/0365353 A1Published application
Apparatuses and/or methods for operating a memory cell as an anti-fuse
AssigneeMicron Technology, Inc.
InventorAndrea Redaelli
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.
Claims21
A memory device, comprising:
- a memory cell having a reprogrammable resistance range, the memory cell comprising a chalcogenide material and a metal plug;
- and
- a selector configured to set the memory cell to a resistance level outside the reprogrammable resistance range.
A method comprising:
- applying a directional bias current to a memory cell comprising a chalcogenide material and a metal plug,
- wherein the memory cell has a reprogrammable resistance range and the directional bias current has a magnitude to form a resistance path at least partially surrounded by the chalcogenide material, and
- wherein the memory cell has a resistance outside the reprogrammable resistance range after the resistance path is formed.
A memory device, comprising:
- a memory array including a plurality of memory cells, each memory cell in the memory array having a reprogrammable resistance range and comprising a chalcogenide material and a metal plug;
- a first selector configured to set a first memory cell to a first resistance level, the first resistance level outside the reprogrammable resistance range;
- and
- a second selector configured to set a second memory cell to a second resistance level, the second resistance level within the reprogrammable resistance range.
1 more element
Dependencies are inferred from the claim text.