Dynamic Tuning Of First Read Countermeasures

A method, comprising:

• performing an operation on a first block of memory cells, the performing the operation comprises applying voltages to word lines of the first block via pass transistors of the first block;
• determining that a time period since a last sensing operation in a second block is below a threshold;
• and
• in response to the determining that the time period since the last sensing operation in the second block is below the threshold, applying voltages to word lines of the second block via pass transistors of the second block according to a function of temperature, during the performing of the operation on the first block of memory cells.

An apparatus, comprising:

• a first block of memory cells;
• voltage drivers associated with the first block of memory cells;
• pass transistors associated with the first block of memory cells;
• a second block of memory cells;
• voltage drivers associated with the second block of memory cells;
• pass transistors associated with the second block of memory cells;
• and
• a control circuit configured to make a determination that a temperature is below a threshold, and in response to the determination, apply voltages to the memory cells of the second block according to a function of the temperature when the second block is unselected for a read, program or erase operation and the first block is selected for a read, program or erase operation.