Memory control circuit unit, memory storage device and signal receiving method

A memory storage device, comprising:

• a connection interface unit, configured to couple to a host system;
• a rewritable non-volatile memory module;
• a volatile memory;
• a memory control circuit unit, coupled to the connection interface unit, the rewritable non-volatile memory module and the volatile memory,
• wherein the memory control circuit unit is configured to receive a first signal from the volatile memory,
• wherein the memory control circuit unit is further configured to adjust a voltage value of the first signal to a voltage range in response to an internal impedance of the memory control circuit unit,
• wherein a central value of the voltage range is not equal to a default voltage value,
• wherein the default voltage value is one half a sum of a voltage value of a supply voltage of the memory control circuit unit and a voltage value of a reference ground voltage,
• wherein the memory control circuit unit is further configured to generate an input signal according to a voltage correspondence between the first signal and an internal reference voltage.

A signal receiving method for a memory storage device having a volatile memory, and the signal receiving method comprising:

• receiving a first signal from the volatile memory by a memory interface circuit;
• adjusting a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, wherein a central value of the voltage range is not equal to a default voltage value, wherein the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage;
• and
• generating an input signal according to a voltage correspondence between the first signal and an internal reference voltage.