Memory Devices Including Buffer Memory and Memory Modules Including the Same
AssigneeSamsung Electronics Co., Ltd.
InventorsChankyung KIM, Sungchul PARK, Soo-Ho CHA, Seongil O, Kwangchol CHOE
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AssigneeSamsung Electronics Co., Ltd.
InventorsChankyung KIM, Sungchul PARK, Soo-Ho CHA, Seongil O, Kwangchol CHOE
Estimating the term…
Memory devices may include a memory cell connected to a word line and a bit line, a first bit line sense amplifier connected to the memory cell through the bit line and configured to amplify a signal of the bit line, and a second bit line sense amplifier disposed adjacent to the first bit line sense amplifier and not connected to the bit line. The second bit line sense amplifier may be selected by an address received from a processor, and data may be stored in the second bit line sense amplifier or the data is output from the second bit line sense amplifier according to a command received from the processor. In some aspects described herein, the memory device may include a buffer memory that operates at high speed, thereby increasing performance of a memory module.
A memory device comprising:
A memory module comprising:
A memory module comprising:
Dependencies are inferred from the claim text.