Apparatuses, methods, and systems for stochastic memory circuits using magnetic tunnel junctions
AssigneeIntel Corporation
InventorsCharles Augustine, Somnath Paul, Sadique Ul Ameen Sheik, Muhammad M. Khellah
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AssigneeIntel Corporation
InventorsCharles Augustine, Somnath Paul, Sadique Ul Ameen Sheik, Muhammad M. Khellah
Estimating the term…
Embodiments include apparatuses, systems, and methods including a memory apparatus including a plurality of bit cells, wherein each of the plurality of bit cells correspond to a respective weight value and include a switch device that has a magnetic tunnel junction (MTJ) or other suitable resistive memory element to produce stochastic switching. In embodiments, the switch device may produce a switching output according to a stochastic switching probability of the switch device. In embodiments, a bit line or a source line passes a current across the MTJ for a switching time associated with the stochastic switching probability to produce the switching output which enables a determination of whether the respective weight value is to be updated. Other embodiments may also be described and claimed.
1) A stochastic circuit, comprising:
7) A system, comprising:
12) A circuit, comprising:
Dependencies are inferred from the claim text.