Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorIn-Hoe KIM
Life of this patent
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Abstract
A method for fabricating an electronic device including a semiconductor memory includes: forming a memory layer over a substrate; forming a memory element by selectively etching the memory layer, wherein forming the memory element includes forming an etching residue on a sidewall of the memory element, the etching residue including a first metal; and forming a spacer by implanting oxygen and a second metal into the etching residue, the spacer including a compound of the first metal-oxygen-the second metal, the second metal being different from the first metal.
Claims20
A method for fabricating an electronic device including a semiconductor memory, the method comprising:
- forming a memory layer over a substrate;
- forming a memory element by selectively etching the memory layer, wherein forming the memory element includes forming an etching residue on a sidewall of the memory element, the etching residue including a first metal;
- and
- forming a spacer by implanting oxygen and a second metal into the etching residue, the spacer including a compound of the first metal-oxygen-the second metal, the second metal being different from the first metal.
An electronic device, comprising:
- a semiconductor memory, which includes:
- a memory element;
- and
- a spacer disposed on a sidewall of the memory element, the spacer including a compound of a first metal-oxygen-a second metal,
- wherein the first metal and the second metal are different from each other.
Dependencies are inferred from the claim text.