Method for carrying out a neutron detector and neutron detector

A method for realizing a device for detecting a neutron flux having characteristics within predetermined ranges, comprising:

• a phase of determining parameters of the detector, the phase comprising:
• simulating penetration of a flux of incident neutrons having characteristics within the predetermined ranges through a modeled stack comprising successively and in order:
• a first electrode;
• a substrate comprising:
• a first doped layer comprising at least one first dopant species such that the first layer is an n-doped layer or a p-doped layer, with the first layer being formed by the substrate;
• a second doped layer comprising at least one second dopant species such that the second layer is the other among an n-doped layer or a p-doped layer to form, at an interface between the first and second layers, a p-n junction and to form in the first layer and starting from the interface between the first and second layers, a space charge region;
• with the second layer being formed by implantation of the second dopant species in the substrate;
• with the second dopant species being taken from neutron-converting materials such that the second layer forms a neutron conversion layer;
• a second electrode;
• simulating at least one peak of defects created in the first layer of the modeled stack by gaps and/or ionization of the particles generated by the collisions between atoms of the second dopant species and neutrons of the flux of incident neutrons having characteristics within the predetermined ranges;
• identifying depth of a peak of closest defects of the interface between the first and second layers of the modeled stack;
• determining parameters of the first and second layers that the modeled stack should have, depth of the implantation of the second dopant species in the substrate to form the second layer and contents in first and second dopant species respectively of the first and second layers, such that the space charge region extends from the interface between the first and second layers and in the first layer over a depth less than the identified depth of the peak of defects such that the space charge region does not comprise any peak of defects;
• manufacturing the device for detecting, wherein the first layer is carried out then the second layer is carried out by implantation of the second dopant species in a portion of the first layer, the implantation, and implantation depth and content in second dopant species, being carried out according to the parameters determined such that in the device manufactured the space charge region extends from the interface between the first and second layers and in the first layer over a depth less than the identified depth of the peak of defects.

A detector of a flux of neutrons of which the parameters of the flux of neutrons having characteristics within predetermined ranges, with the detector comprising at least one stack of layers comprising successively and in order:

• a first electrode;
• a substrate comprising:
• a first doped layer comprising at least one first dopant species such that the first layer is an n-doped layer or a p-doped layer, with the first layer being formed by the substrate;
• a second doped layer comprising at least one second dopant species such that the second layer is the other among an n-doped layer or a p-doped layer to form, at an interface between the first and second layers, a p-n junction and form in the first layer and starting from the interface between the first and second layers, a space charge region;
• a second electrode;
• wherein:
• the second layer is formed by implantation of the second dopant species in the substrate;
• with the second dopant species being taken from neutron-converting materials such that the second layer forms a neutron conversion layer;
• parameter of the first and second layers, and implantation depth of the second dopant species in the substrate to form the second layer and contents in first and second dopant species respectively of the first and second layers, are chosen such that a space charge region extends from the interface between the first and second layers and in the first layer over a depth less than a depth where would be located a peak of defects that would be created in the first layer by gaps and/or an ionization of particles generated by the collisions between atoms of the second dopant species and neutrons if the detector were exposed to a flux of incident neutrons having characteristics within the predetermined ranges.