Apparatus and method for growing silicon single crystal ingot
AssigneeLG Siltron Inc.
InventorsSang Hee KIM, Young Ho JUNG
Life of this patent
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Abstract
An embodiment provides a method for growing a silicon single crystalline ingot that may include: preparing a silicon melt solution in a crucible; probing a seed in the silicon melt solution; rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; and pulling up an ingot grown from the silicon melt solution, wherein an interface between the growing ingot and the silicon melt solution is formed downward from a horizontal plane at 1 to 5 millimeters, and a bulk micro defects (BMD) size of the grown ingot is between 55 and 65 nanometers.
Claims20
A method of growing a silicon single crystal ingot, comprising:
- preparing a silicon melt solution in a crucible;
- probing a seed in the silicon melt solution;
- rotating the seed and the crucible while applying a horizontal magnetic field to the crucible;
- and
- pulling up an ingot to be grown from the silicon melt solution,
- wherein an interface between the growing ingot and the silicon melt solution is formed downward from a horizontal plane at 1 millimeter to 5 millimeters, and a bulk micro defects (BMD) size of the grown ingot is between 55 nanometers and 65 nanometers.
A silicon single crystal ingot growing apparatus comprising:
- a chamber;
- a crucible provided inside the chamber and accommodating a silicon melt solution;
- a heater provided inside the chamber and heating the silicon melt solution;
- a heat shield material for shielding heat of the heater from the silicon melt solution toward the ingot;
- a pulling unit for rotating and pulling up the ingot to be grown from the silicon melt solution;
- and
- a magnetic field generating unit for applying a horizontal magnetic field to the crucible,
- wherein the pulling unit rotates a seed at a speed of 8 rpm or less.
A silicon single crystal ingot growing apparatus comprising:
- a chamber;
- a crucible provided inside the chamber and accommodating a silicon melt solution;
- a heater provided inside the chamber and heating the silicon melt solution;
- a heat shield material for shielding heat of the heater from the silicon melt solution toward the ingot;
- a pulling unit for rotating and pulling up the ingot to be grown from the silicon melt solution;
- and
- a magnetic field generating unit for applying a horizontal magnetic field to the crucible,
- wherein the pulling unit pulls up the ingot so that an interface between the growing ingot and the silicon melt solution is formed from 1 millimeter to 5 millimeters down from a horizontal plane.
Dependencies are inferred from the claim text.