US 2017/0362699 A1 · IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS

Abstract

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

Claims20

Dependent claims

An ion implantation system, comprising:

an ion source configured to form an ion beam from aluminum iodide;
a beamline assembly configured to selectively transport the ion beam;
an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece;
a water delivery system configured to introduce water or water vapor to one or more of the ion source, beamline assembly, and end station, wherein the water delivery system is configured to react the water or water vapor with residual aluminum iodide formed on one or more internal surfaces of one or more the ion source, beamline assembly, and end station;
and
a vacuum system configured to substantially evacuate one or more of the ion source, beamline assembly, and end station, wherein the vacuum system is further configured to substantially remove one or more products of the reaction of the water or water vapor with the reacted residual aluminum iodide from the respective ion source, beamline assembly, and end station.

3 more elements

Dependencies are inferred from the claim text.

Implantation using solid aluminum iodide (ali3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

Life of this patent

Implantation using solid aluminum iodide (ali3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

Life of this patent

Abstract

Claims20