Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates

A chemical mechanical polishing (CMP) composition, comprising:

• (A) colloidal silica particles in a total amount of from 0.01 wt.-% to 3 wt.-% based on the total weight of the respective CMP composition,
• (B) at least one substituted aromatic compound with at least one carboxylic acid function (B) selected from the group consisting of isophathalic acid, terephthalic acid, 2-aminoterephthalic acid, 4-methylamino benzoic acid, 4-(dimethylamino)benzoic acid, 4-methylsulfonyl benzoic acid, trimesic acid, 3-methylamino benzoic acid, 4-(diethylamino)benzoic acid, 3-dimethylamino benzoic acid and 2-(benzylamino)benzoic acid in a total amount of from 0.002 wt.-% to 0.1 wt.-% based on the total weight of the respective CMP composition,
• (C) at least one amino acids (C) selected from the group consisting of glycine, alanine, leucine, valine, cysteine, serine and proline and a salt thereof, in
• a total amount of from 0.2 wt.-% to 0.9 wt.-% based on the total weight of the respective CMP composition,
• (D) hydrogen peroxide in a total amount of from 0.2 wt.-% to 2 wt.-% based on the total weight of the respective CMP composition, and
• (E) an aqueous medium,
• wherein the CMP composition (Q) has a pH of from 7 to 10.

A process for the manufacture of a semiconductor device, said process comprising:

• chemical mechanical polishing of a substrate (S) used in the semiconductor industry,
• in the presence of a chemical mechanical polishing CMP composition (Q);
• p1 wherein the substrate (S) comprises
• (i) cobalt and/or
• (ii) a cobalt alloy;
• wherein the (CMP) composition comprises
• (A) an inorganic particle,
• (B) a substituted aromatic compound with at least one carboxylic acid function of the general formula 1 to 5 as corrosion inhibitor
• wherein R1, R2, R3, R4 and R5 are independently from each other H, hydroxy, alkyl, amino, aryl alkylamino, alkylarylamino, benzylamino, carboxyl, alkylsulfonyl, sulfonic acid, sulfonate, thio or alkylthio,
• (C) at least one amino acid,
• (D) at least one oxidizer,
• (E) an aqueous medium, and
• wherein the CMP composition (Q) has a pH of from 7 to 10.