Flexible Diposable MEMS Pressure Sensor

A method of producing a MEMS device, comprising:

• disposing a layer of photoresist on a substrate;
• forming a MEMS sensor element over the layer of photoresist to form an intermediate structure, wherein the MEMS sensor element is at least one of:
• encapsulated by material that is insoluble to water;
• and
• configured so as to be unreactive to water;
• and
• soaking the intermediate structure in a water bath having a temperature from about 30 degrees C. to about 90 degrees C. until the MEMS sensor element is released from the layer of photoresist.

A method of producing a flexible MEMS pressure sensor, comprising:

• forming a sacrificial layer on a substrate;
• forming a first flexible support layer on the substrate;
• forming a first conducting layer on the first flexible layer that extends from a first side over less than an entirety of the first flexible support layer;
• forming a liquid or gel separator on an internal region of the first conducting layer;
• forming a second flexible support layer via vapor deposition on the first flexible support layer, on the separator, and on the first conducting layer, extending from the first side to a second side opposite the first side, so as to encapsulate the separator between the first conducting layer and the second flexible support layer, and so as to encapsulate the first conducting layer between the first flexible support layer and the second flexible support layer and separator, wherein the separator has a lower vapor pressure than a vapor pressure that occurs during the vapor deposition of the second flexible support layer;
• forming a second conducting layer on the second flexible support layer from the second side over less than an entirety of the second flexible support layer, such that the second conducting layer at least partially overlaps the first conductive layer to form a parallel plate capacitor;
• and
• forming a third flexible support layer over the second conducting layer and the second flexible support layer so as to encapsulate the second conducting layer between the second flexible support layer and the third flexible support layer.