Method for calculating surface electric field distribution of nanostructures
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsJIANG-TAO WANG, XIANG JIN, PENG LIU, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
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Abstract
The disclosure relates to a method for calculating surface electric field distribution of nanostructures. The method includes the following steps of: providing a nanostructure sample located on an insulated layer of a substrate; spraying first charged nanoparticles to the insulated surface; blowing vapor to the insulated surface and imaging the first charged nanoparticles via an optical microscope, recording the width w between the first charged nanoparticles and the nanostructure sample, and obtaining the voltage U of the nanostructure sample by an equation.
Claims12
A method for calculating surface electric field distribution of nanostructures, the method comprising the following steps of:
- providing a nanostructure sample located on an insulated layer of a substrate;
- spraying first charged nanoparticles onto the insulated layer, wherein the first charged nanoparticles and the nanostructure sample are all positively charged or all negatively charged;
- blowing vapor to the insulated layer and imaging the first charged nanoparticles via an optical microscope, and recording a width w between the first charged nanoparticles and the nanostructure sample, and
- obtaining a voltage U of the nanostructure sample by an equation
- w
- =
- (
- P
- c
- 32
-
- (
- U
- -
- U
- D
- )
-
- D
- 2
-
- ln
-
- (
- 2
-
- D
- /
- d
- ?
- )
- )
- -
- 1
- /
- 3
- ,
-
- ?
-
- indicates text missing or illegible when filed
-
- wherein Fc is a constant force from the first charged nanoparticles flow, U0 is a threshold voltage of the nanostructure sample, D is a thickness of the insulated layer, d is a diameter of the nanostructure sample, ∈r equals to ∈/∈0, ∈ is a permittivity of the insulated layer, and ∈0 is a permittivity of vacuum.
A method for calculating surface electric field distribution of nanostructures, the method comprising the following steps of:
- providing a nanostructure sample located on an insulated layer of a substrate and a vapor-condensation-assisted optical microscope system comprising a vapor-condensation-assisted device and an optical microscope comprising a stage, wherein the vapor-condensation-assisted device is configured to provide vapor;
- locating the substrate having the nanostructure sample thereon on the stage;
- spraying first charged nanoparticles to the insulated layer, wherein the first charged nanoparticles and the nanostructure sample are all positively charged or all negatively charged;
- blowing vapor to the insulated layer and imaging the first charged nanoparticles via the optical microscope, and recording a width w between the first charged nanoparticles and the nanostructure sample, and
- obtaining a voltage U of the nanostructure sample by an equation
- w
- =
- (
- P
- c
- 32
-
- (
- U
- -
- U
- D
- )
-
- D
- 2
-
- ln
-
- (
- 2
-
- D
- /
- d
- ?
- )
- )
- -
- 1
- /
- 3
- ,
-
- ?
-
- indicates text missing or illegible when filed
-
- wherein Fc is a constant force from the first charged nanoparticles flow, U0 is a threshold voltage of the nanostructure sample, D is a thickness of the insulated layer, d is a diameter of the nanostructure sample, ∈r equals to ∈/∈0, ∈ is a permittivity of the insulated layer, and ∈0 is a permittivity of vacuum.
Dependencies are inferred from the claim text.