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US 2017/0324407 A1Published application
Radio Frequency Switching Circuit with Distributed Switches
AssigneePeregrine Semiconductor Corporation
InventorsJianhua Lu, Peter Bacon, Raul Inocencio Alidio, Vikram Sekar
Life of this patent
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Abstract
An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
Claims20
A radio frequency switching device including:
- (a) at least one common port;
- (b) at least one field effect transistor (FET) series switch, each coupled to at least one common port;
- (c) at least one terminal port;
- (d) at least one transmission line, the ends of each transmission line being series coupled between a respective one of the at least one FET series switch and a respective one of the at least one terminal port;
- and
- (e) for at least one such transmission line, at least two FET shunt switch units coupled between circuit ground and such transmission line in a tuning network configuration, wherein each FET of the at least two FET shunt switch units includes a primary resistor coupled to a gate of such FET in close proximity to such gate, and further including at least one secondary resistor each series coupled to the primary resistor of two or more of such FETs but located farther away from the gate of each such FET than the primary resistor coupled to each such gate.
3 more elements
A radio frequency switching device including:
- (a) at least one common port;
- (b) at least one field effect transistor (FET) series switch, each coupled to at least one common port;
- (c) at least one terminal port;
- (d) at least one transmission line, the ends of each transmission line being series coupled between a respective one of the at least one FET series switch and a respective one of the at least one terminal port, each transmission line including one or more compensating inductance elements;
- and
- (e) for each transmission line, at least two FET shunt switch units coupled between circuit ground and such one or more compensating inductance elements in a tuning network configuration, wherein each FET shunt switch unit has an OFF state capacitance and the tuning network configuration compensates for such OFF state capacitance, and wherein each FET of the at least two FET shunt switch units includes a primary resistor coupled to a gate of such FET in close proximity to such gate, and further including at least one secondary resistors each series coupled to the primary resistor of two or more of such FETs but located farther away from the gate of each such FET than the primary resistor coupled to each such gate.
3 more elements
A method for configuring a radio frequency switching device, including the steps of:
- (a) providing at least one common port;
- (b) coupling at least one field effect transistor (FET) series switch to at least one common port;
- (c) coupling a first end of at least one transmission line to a respective one of the at least one FET series switch, each transmission line including at least one series-coupled inductive tuning component;
- (d) coupling at least one terminal port to a second end of a respective one of the at least one transmission line;
- and
- (e) coupling at least two FET shunt switch units between circuit ground and a corresponding one of the at least one transmission line in a tuning network configuration, wherein each FET of the at least two FET shunt switch units includes a primary resistor coupled to a gate of such FET in close proximity to such gate;
- and
- (f) coupling at least one secondary resistor in series to the primary resistor of two or more FETs, wherein each secondary resistor is located farther away from the gate of each such coupled FET than the primary resistor coupled to each such gate.
5 more elements
A method for configuring a radio frequency switching device, including the steps of:
- (a) providing at least one common port;
- (b) coupling at least one field effect transistor (FET) series switch to at least one common port;
- (c) coupling a first end of at least one transmission line to a respective one of the at least one FET series switch, each transmission line including one or more compensating inductance elements;
- (d) coupling at least one terminal port to a second end of a respective one of the at least one transmission line;
- (e) coupling at least two FET shunt switch units to a corresponding one of the at least one transmission line, wherein each FET shunt switch unit is coupled between circuit ground and such one or more compensating inductance elements of such at least one transmission line in a tuning network configuration, wherein each FET shunt switch unit has an OFF state capacitance and the tuning network configuration compensates for such OFF state capacitance, and wherein each FET switch of the at least two FET shunt switch units includes a primary resistor coupled to a gate of such FET switch in close proximity to such gate and
- (f) coupling at least one secondary resistor in series to the primary resistor of two or more FET switches, wherein each secondary resistor is located farther away from the gate of each such coupled FET switch than the primary resistor coupled to each such gate.
3 more elements
Dependencies are inferred from the claim text.