# US 2017/0324398 A1 · Saw device and method for manufacturing saw device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2017/0324398 A1 - Document ID: US20170324398A1 - Status: Published application - Kind: A1 - Application number: 15/529,552 - Filed: 2015-11-27 - Published: 2017-11-09 - Earliest claimed: 2014-11-28 - Assignees: KYOCERA Corporation - Applicants: KYOCERA Corporation - Inventors: Motohiro UMEHARA; Yutaka NABESHIMA - Web page: https://patentgrep.com/patent/US20170324398A1 ## CPC - H03H 9/25: Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} - H03H 3/08: for the manufacture of resonators or networks using surface acoustic waves - H03H 9/02559: {of lithium niobate or lithium-tantalate substrates} - H03H 9/1071: {the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device} - H03H 9/14538: {Formation} - H10N 30/02: Forming enclosures or casings - H10N 30/06: Forming electrodes or interconnections, e.g. leads or terminals - H10N 30/072: by laminating or bonding of piezoelectric or electrostrictive bodies - H10W 76/12: characterised by their shape - H10W 76/18: Insulating materials, e.g. resins, glasses or ceramics - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A SAW device includes a SAW element, a conductor connected to the SAW element, an LT substrate including the SAW element, and a case for housing the LT substrate including the SAW element. The case includes a cover part, a lateral part, and a bottom part. The bottom part is including a sapphire substrate, the LT substrate is positioned on a first surface of the sapphire substrate, the first surface serving as an inner surface of the case, and a second surface opposite to the first surface serves as an outer surface of the case. The conductor includes a via conductor provided in a through-hole continuously penetrating through the sapphire substrate and the LT substrate. ## Claims ### Claim 1 A SAW device comprising: a SAW element; a conductor connected to the SAW element; an LT substrate including the SAW element; and a case for housing the LT substrate including the SAW element, wherein the case includes a cover part, a lateral part, and a bottom part, the bottom part includes a sapphire substrate, the LT substrate is positioned on a first surface of the sapphire substrate, the first surface serving as an inner surface of the case, and a second surface opposite to the first surface serves as an outer surface of the case, and the conductor includes a via conductor provided in a through-hole continuously penetrating through the sapphire substrate and the LT substrate. ### Claim 2 (depends on 1) The SAW device according to claim 1, wherein the through-hole includes a first through-hole penetrating through the sapphire substrate, and an opening diameter of the first through-hole in the second surface is larger than an opening diameter of the first through-hole in the first surface. ### Claim 3 (depends on 2) The SAW device according to claim 2, wherein the diameter of the first through-hole gradually increases with the distance from the first surface toward the second surface. ### Claim 4 (depends on 1) The SAW device according to claim 1, wherein the first through-hole penetrating through the sapphire substrate has a center axis connected between a center of an opening in the first surface and a center of an opening in the second surface, and the center axis is tilted with respect to a vertical line of the first surface. ### Claim 5 (depends on 1) The SAW device according to claim 1, wherein the first through-hole penetrating through the sapphire substrate has a modified part including polycrystalline alumina, on at least one part of an inner surface. ### Claim 6 (depends on 5) The SAW device according to claim 5, wherein the first through-hole has the modified part formed of polycrystalline alumina, on the whole inner surface. ### Claim 7 (depends on 5) The SAW device according to claim 5, wherein a second through-hole penetrating through the LT substrate is provided and has the modified part including polycrystalline alumina, on an inner surface close to the first through-hole. ### Claim 8 (depends on 7) The SAW device according to claim 7, wherein the second through-hole has the modified part formed of polycrystalline alumina, on the whole inner surface. ### Claim 9 (depends on 1) The SAW device according to claim 1, wherein the sapphire substrate has thickness of 0.05 mm to 1 mm both inclusive. ### Claim 10 (depends on 1) The SAW device according to claim 1, wherein the LT substrate is thinner than the sapphire substrate. ### Claim 11 A method for manufacturing a SAW device comprising a SAW element; a conductor connected to the SAW element; an LT substrate including the SAW element; and a case for housing the LT substrate including the SAW element, the method comprising the steps of: bonding the LT substrate on a first surface of a sapphire substrate; polishing at least the LT substrate of a bonded body of the sapphire substrate and the LT substrate; forming a through-hole continuously penetrating through the sapphire substrate and the LT substrate; forming a via conductor by filling the through-hole with a conductor; connecting the SAW element to the via conductor by forming the SAW element on the LT substrate; and bonding a bottom part including the sapphire substrate to a cover part and a lateral part, or to a cover member including of the cover part and the lateral part. ### Claim 12 (depends on 11) The method for manufacturing a SAW device according to claim 11, wherein in the step of forming the through-hole, the through-hole is formed by laser irradiation from a second main surface of the sapphire substrate.