Saw transducer with suppressed mode conversion
AssigneeSnapTrack, Inc.
InventorsThomas EBNER, Markus MAYER, Ulrike RÖSLER, Gholamreza DADGAR JAVID, Stefan BEREK
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Abstract
A transducer for SAW-type or PSAW-type acoustic waves is proposed in which the dielectric (DK) is applied onto the substrate so that the gap (GP) between the ends of the electrode fingers and the opposite bus electrode is completely filled with said dielectric (DK), but the active area of the transducer, thus transversal overlap area (UB) of the electrode fingers, is not covered by said dielectric.
Claims9
A transducer for SAW-type or PSAW-type acoustic waves,
- constructed on a leaky wave substrate that has a crystal cut benefiting the generation of SAWs
- with two electrode combs arranged on the substrate, which electrode combs respectively have electrode fingers (EF) connected with on a bus electrode (BE), wherein the two electrode combs are arranged interleaved with one another so that their electrode fingers (EF) mutually overlap in a transversal overlap area (UB)
- in which the ends of overlapping electrode fingers (EF) of a first of the electrode combs and the opposite bus electrode (BE) of the respective second electrode comb, or the respective opposite ends of overlapping and non-overlapping short electrode fingers (SF), are spaced in the transversal direction so that a gap (GP) is formed between them
- in which a dielectric (DK) is applied onto the substrate so that the gap (GP) is completely filled with this, but the transversal overlap area (UB) of the electrode fingers is not covered by this
- in which the dielectric (DK) is chosen with regard to material and layer thickness so that an acoustic wave experiences approximately the same acoustic impedance in the transversal overlap area (UB) and in the gap area (GB), and the acoustic wave travels just as quickly in the gap area as within the overlap area.
The transducer according to one of the preceding claims,
- in which the dielectric (DK) comprises SiO2 or silicon nitride
- in which the metallization of the electrode fingers (EF) comprises Al, Cu or Ti,
- in which the metallization comprises a multi-layer structure made up of the different components in pure form, or in the form of alloys formed with one another
- in which the height of the dielectric layer corresponds to 10-500% of the height of the metallization.
The transducer according to one of the preceding claims,
- in which the dielectric (DK) comprises SiO2 or is composed of silicon nitride
- in which the height of the dielectric layer corresponds to 50-150% of the height of the metallization.
The transducer according to one of the preceding claims,
- constructed on a substrate that comprises lithium tantalate.
The transducer according to one of the preceding claims,
- in which the overlap area (UB) has a width of less than 20λ, wherein λ is the wavelength of the acoustic wave, wherein the aperture is preferably between 5λ and less than 20λ.
Dependencies are inferred from the claim text.