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US 2017/0324219 A1Published application
Semiconductor laser incorporating an electron barrier with low aluminum content
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorMark CROWLEY
Life of this patent
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Abstract
A semiconductor laser may include a substrate, an active region, and an electron stopper layer. The electron stopper layer may include an aluminum gallium indium arsenide phosphide alloy. The aluminum gallium indium arsenide phosphide alloy may have an AlxGayIn(1-x-y)AszP(1-z) composition.
Claims26
A semiconductor laser comprising:
- a substrate;
- an active region;
- and
- an electron stopper layer including an aluminum gallium indium arsenide phosphide alloy having an AlxGayIn(1-x-y)AszP(1-z) composition.
1 more element
A semiconductor laser comprising:
- a substrate;
- an active region;
- a lateral current blocking material;
- and
- an electron stopper layer configured to reduce oxidation and form an interface with the current blocking material, wherein the electron stopper layer includes an aluminum gallium indium arsenide phosphide alloy having an AlxGayIn(1-x-y)AszP(1-z) composition.
2 more elements
A method of fabricating a semiconductor laser comprising:
- arranging an n-type cladding layer on a substrate;
- arranging a hole stopper layer on the n-type cladding layer;
- arranging a multi quantum well (MQW) active layer on the hole stopper layer;
- arranging an electron stopper layer on a multi quantum well (MQW) active layer;
- and
- arranging a current blocking material adjacent to the n-type cladding layer, hole stopper layer, MQW active layer, and electron stopper layer,
- wherein the electron stopper layer is configured to reduce oxidation and form an interface with the current blocking material, and includes an aluminum gallium indium arsenide phosphide alloy having an AlxGayIn(1-x-y)AszP(1-z) composition.
4 more elements
Dependencies are inferred from the claim text.