Method for producing a resonant structure of a distributed-feedback semiconductor laser
OwnerMathieu CARRAS, Grégory MAISONS +1inventors
InventorsMathieu CARRAS, Grégory MAISONS, Bouzid SIMOZRAG
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Abstract
A reproducible method for producing a resonant structure of a distributed-feedback semiconductor laser exhibiting a narrow waveguide of the order of some ten micrometers, the production of the diffraction grating being carried out subsequent to the step of producing the strip is provided. In a last step, a diffraction grating is engraved as a function of a desired precise wavelength.
Claims12
A method for producing a resonant structure of a distributed-feedback semiconductor laser, the resonant structure comprising a multilayer stack of semi-conducting materials, the multilayer stack exhibiting at least two cavities defining a strip on the upper face of the stack, a diffraction grating being disposed on the strip, the method comprising, in this order:
- a first step of producing the strip comprising:
- a first sub-step of forming said cavities,
- a second sub-step of covering the upper face of the stack with a layer of dielectric material,
- a third sub-step of removing a part of the layer of dielectric material between said cavities to form an opening exposing a part of the semi-conducting material and serving as access to the electrical contact, the removal procedure being specific to the dielectric material,
- a second step of producing the diffraction grating inside the opening on the strip comprising:
- a fourth sub-step of constructing metallic bands comprising a metallic layer on the upper face of the stack, the metallic bands serving as mask for the etching, the bands representing the negative of the pattern of the diffraction grating, and
- a fifth sub-step of specific dry etching of the semi-conducting material.
Dependencies are inferred from the claim text.