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AssigneesCambridge Enterprise Limited, King Abdulaziz City for Science and Technology
InventorsRichard Friend, Zhi Kuang Tan, Li Guangru, Di Dawei, Neil C. Greenham
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Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.
A method for the preparation of a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles, the method comprising blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give said semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.
A method according to any preceding claim wherein the semiconducting perovskite is an organometal halide perovskite material.
A thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles
A method of manufacturing a solid state light-emitting device according to any preceding claim wherein the emissive layer has a thickness of ≦500 nm.
A method of manufacturing a solid state light-emitting device according to any preceding claim wherein a thin insulating layer is deposited between either or both of the charge injecting layers and the light-emitting layer.
The use of a semiconducting organic insulating material selected from a polymer and a small organic molecule for the preparation of a matrix comprising semiconducting perovskite nanoparticles.
A solid state light-emitting device substantially as hereinbefore described with reference to FIG. 1a.
A method of manufacturing a solid state light-emitting device substantially as hereinbefore described with reference to the drawings.
Dependencies are inferred from the claim text.