US 2017/0324052 A1Published application

Organic electric memory device based on phosphonic acid or trichlorosilane-modified ito glass substrate and preparation method thereof

AssigneeSoochow University

InventorsJianmei LU, Jinghui HE

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Abstract

The invention discloses an organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and a preparation method thereof. The preparation method comprises the following steps of 1) cleaning the ITO glass substrate; 2) forming a phosphonic acid or trichlorosilane modified layer; 3) forming an organic coating film layer; and 4) forming an electrode, and finally obtaining the organic electric memory device. By adoption of the method, a series of sandwich-type organic electric memory devices are prepared; meanwhile, the preparation method is simple, convenient, fast, and easy to operate; compared with the conventional device, the turn-on voltage of the organic electric memory device is lowered, the yield of the multi-level system is improved, and the problem of relatively low ternary productivity at present is solved; and therefore, the organic electric memory device has extremely high application value in the future memory fields.

Claims10

Dependent claims

A preparation method for an organic electric memory device based on a phosphonic acid or trichlorosilane-modified ITO glass substrate, which comprises the following steps:

(1) cleaning the ITO glass substrate with ultrasonic cleaning method;
(2) the ITO glass substrate is modified with phosphonic acid by a tethered method, or with trichlorosilane by spin coating, to form a modified layer, wherein the modified layer is a monolayer of phosphonic acid molecule or a monolayer of trichlorosilane molecule;
said phosphonic acid is arylphosphonic acid or alkylphosphonic acid;
said trichlorosilane has the formula of RSiCl3, wherein R is a linear alkyl group;
(3) depositing organic coating material on the modified layer to form an organic coating layer, wherein said organic coating layer has a thickness of 80 to 100 nm;
said organic coating material is a squaric acid-based organic substance;
(4) depositing electrode material on the organic coating layer to form an electrode, wherein the thickness of said electrode is 80 to 100 nm, obtaining the organic electric memory device based on the phosphoric acid or trichlorosilane-modified ITO glass substrate.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/581,739Filed 28 Apr 2017
Priority: CN 201610284076.03 May 2016
Published: 9 Nov 2017
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10K 71/60
Manufacture or treatment specially adapted for the organic devices covered by this subclass: forming conductive regions or layers, e.g. electrodes
H10K 19/00
Integrated devices, or assemblies of multiple devices, comprising at least one organic
H10K 71/10
Manufacture or treatment specially adapted for the organic devices covered by this subclass: deposition of organic active material
H10K 77/10
Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80: substrates,…