Semiconductor light-emitting element

A semiconductor light-emitting element comprising:

• a first semiconductor layer of a first conductivity type;
• a light-emitting functional layer that is formed on the first semiconductor layer and includes first and second light-emitting layers;
• and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to the conductivity type of the first semiconductor layer, wherein
• the first light-emitting layer has:
• a first base layer that has a composition subject to stress strain from the first semiconductor layer and has a plurality of first base segments partitioned into a random net shape;
• a first quantum well layer that retains a segment shape of the first base segment and is formed on the first base layer;
• and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer, and
• the second light-emitting layer has:
• a second base layer that has a composition subject to stress strain from the first barrier layer and has a plurality of second base segments partitioned into a random net shape;
• a second quantum well layer that retains a segment shape of the second base segment and is formed on the second base layer;
• and a second barrier layer formed on the second quantum well layer.