Semiconductor light-emitting element

A semiconductor light-emitting element comprising:

• a first semiconductor layer of a first conductivity type;
• a first light-emitting layer formed on the first semiconductor layer;
• a second light-emitting layer formed on the first light-emitting layer;
• and a second semiconductor layer that is formed on the second light-emitting layer and is of a conductivity type opposite to the conductivity type of the first semiconductor layer, wherein
• the first light-emitting layer has:
• a base layer that has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned into a random net shape;
• and a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer and formed on the base layer, the first quantum well structure layer retaining segment shapes of the plurality of base segments, and
• the second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer, and the second light-emitting layer has a groove, which retains the segment shape, in a surface of an end barrier layer located closest to the first light-emitting layer among the plurality of barrier layers.