Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references
AssigneeOvonyx Memory Technology, LLC
InventorsFabio Pellizzer, Innocenzo Tortorelli
Life of this patent
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Abstract
Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.
Claims21
(canceled)
A method, comprising:
- forming one or more first electrodes over a first dielectric material;
- etching one or more first trenches in the one or more first electrodes;
- filling the one or more first trenches with a second dielectric material, the second dielectric material at least partially covering the one or more first electrodes;
- etching one or more second trenches into the second dielectric material;
- and
- forming a storage component material on a first vertical wall, a bottom portion, and a second vertical wall of the one or more second trenches.
A memory cell, comprising:
- one or more electrodes formed over a first dielectric material;
- one or more first trenches formed in the one or more electrodes;
- a second dielectric material that fills the one or more first trenches and at least partially covers the one or more electrodes;
- one or more second trenches formed in the second dielectric material;
- and
- a storage component material formed on at least a portion of the one or more second trenches.
A system comprising:
- a memory cell comprising storage components, each storage component including storage component material applied over at least a surface of a trench in a dielectric material such that a first horizontal segment of the storage component material and a first vertical wall of the trench form a first storage component and a second horizontal segment of the storage component material and a second vertical wall of the trench form a second storage component;
- a processor to initiate a memory access command to access the memory cell;
- and
- a control unit to process the memory access command from the processor.
Dependencies are inferred from the claim text.