Resistive memory having confined filament formation
AssigneeMicron Technology, Inc.
InventorsEugene P. Marsh, Jun Liu
Life of this patent
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Abstract
Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.
Claims21
1-20. (canceled)
A method of processing a resistive memory cell, comprising:
- forming an opening in a stack having a silicon material and a first oxide material on the silicon material;
- forming a second oxide material in an opening adjacent the silicon material by oxidizing the silicon material adjacent the opening such that a portion of the silicon material is consumed;
- and
- forming an ion source material in the opening adjacent the first oxide material and the second oxide material.
A method of processing a resistive memory cell, comprising:
- forming an opening in a stack having an electrode, a silicon material on the electrode, and a first oxide material on the silicon material;
- forming a second oxide material in an opening adjacent the silicon material and on the electrode;
- and
- forming a resistive memory material in the opening adjacent the first oxide material and the second oxide material.
A resistive memory cell, comprising:
- a vertical stack having:
- an electrode;
- a silicon material on and directly contacting the electrode;
- a first oxide material on the silicon material;
- and
- a second oxide material formed on a sidewall of the silicon material.
Dependencies are inferred from the claim text.